Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layer
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United States of America Patent
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Aug 9, 2016
Grant Date -
Oct 11, 2012
app pub date -
Dec 25, 2009
filing date -
Dec 25, 2009
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Abstract
A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.
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