Stack memory

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United States of America Patent

PATENT NO 9406652
APP PUB NO 20160133603A1
SERIAL NO

14891635

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Abstract

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A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

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Patent Owner(s)

Patent OwnerAddress
SILICONFILE TECHNOLOGIES INCSEOCHO-GU SEOUL 137-130

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Heui-Gyun Gyeonggi-do, KR 11 125
Ahn, Sang Wook Gyeonggi-do, KR 13 260
Jung, Huy Chan Gyeonggi-do, KR 8 248
Lee, Do Young Gyeonggi-do, KR 48 661
Lee, Yong Woon Gyeonggi-do, KR 14 266

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