Semiconductor device having voltage generation circuit

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United States of America

PATENT NO 9405306
SERIAL NO

14518246

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Abstract

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The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

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Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

International Classification(s)

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  • 2014 Application Filing Year
  • G05F Class
  • 1081 Applications Filed
  • 922 Patents Issued To-Date
  • 85.30 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Horiguchi, Masashi Kanagawa, JP 190 3754
Sano, Shinya Kanagawa, JP 61 503
Takahashi, Yasuhiko Kanagawa, JP 61 759

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  • G05F Class
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges664281092598411401 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 80100 +0255075100125150175200225250275300325350375400425450

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11.5 Year Payment $7400.00 $3700.00 $1850.00 Feb 2, 2028