Large area, low-defect gallium-containing nitride crystals, method of making, and method of use

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United States of America Patent

PATENT NO 9404197
APP PUB NO 20140065360A1
SERIAL NO

13600191

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Abstract

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An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

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Patent Owner(s)

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SLT TECHNOLOGIES INCC/O LOEB & LOEB 10100 SANTA MONICA BLVD SUITE 2200 LOS ANGELES CA 90067

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
D'Evelyn, Mark P Santa Barbara, US 113 5838
Downey, Bradley C Santa Barbara, US 6 96
Ehrentraut, Dirk Santa Barbara, US 19 388
Jiang, Wenkan Corona, US 14 153

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