Pseudomonas putida strain as well as its microbial inoculum and application
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United States of America Patent
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Aug 2, 2016
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Mar 24, 2016
app pub date -
Jan 7, 2015
filing date -
Sep 18, 2014
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Abstract
A Pseudomonas putida strain is named as Pseudomonas putida S-1, which was preserved at China Center for Type Culture Collection (CCTCC) on Sep. 25, 2013 with the deposit number of CCTCC NO: M2013444. The strain of this invention takes isopropanol, ethanal, dipropyl disulfide, diethyl disulfide and propanethiol as the sole carbon source for effective degradation of substrate simultaneously with the energy growth. Furthermore, it can obtain a perfect growth in different cultivation modes owing to high substrate tolerance, which has laid down a solid foundation for engineering application for elimination of volatile organic compounds contained exhaust gas by means of biological purification.
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