Trench MOSFET having an independent coupled element in a trench
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United States of America Patent
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Jul 26, 2016
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app pub date -
Mar 24, 2015
filing date -
Sep 14, 2012
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Abstract
A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.
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