Liquid compositions and methods of fabricating a semiconductor device using the same
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United States of America Patent
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Jul 26, 2016
Grant Date -
Mar 19, 2015
app pub date -
Jun 24, 2014
filing date -
Sep 17, 2013
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Abstract
The present inventive concepts provide a liquid composition for etching a metal containing copper. The liquid composition may include hydrogen peroxide in a range of about 0.1 wt % to about 10 wt % and a buffer solution in a range of about 0.1 wt % to about 10 wt %. The buffer solution may include citrate. The liquid composition may have a pH in a range of about 4.0 to about 7.0.
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