Ge—Si avalanche photodiode with silicon carrier-energy-relaxation layer and edge electric field buffer region
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United States of America Patent
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Jul 19, 2016
Grant Date -
Jan 29, 2015
app pub date -
Jul 23, 2014
filing date -
Jul 23, 2013
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Abstract
Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon carrier-energy-relaxation layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode.
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