Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
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United States of America Patent
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Jul 19, 2016
Grant Date -
Jul 3, 2014
app pub date -
Dec 17, 2013
filing date -
Mar 18, 2011
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Abstract
Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process.
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