High voltage deep trench capacitor
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United States of America Patent
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Jul 19, 2016
Grant Date -
Sep 16, 2010
app pub date -
Jun 2, 2010
filing date -
May 23, 2007
priority date (Note) -
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Abstract
A semiconductor process and apparatus provide a high voltage deep trench capacitor structure (10) that is integrated in an integrated circuit, alone or in alignment with a fringe capacitor (5). The deep trench capacitor structure is constructed from a first capacitor plate (4) that is formed from a doped n-type SOI semiconductor layer (e.g., 4a-c). The second capacitor plate (3) is formed from a doped p-type polysilicon layer (3a) that is tied to the underlying substrate (1).
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