Ga2O3 semiconductor element

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United States of America Patent

PATENT NO 9397170
APP PUB NO 20140217469A1
SERIAL NO

14343367

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Abstract

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A Ga2O3 semiconductor element includes: an n-type β-Ga2O3 single crystal film, which is formed on a high-resistance β-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type β-Ga2O3 single crystal film; and a gate electrode, which is formed on the n-type β-Ga2O3 single crystal film between the source electrode and the drain electrode.

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Patent Owner(s)

  • NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY;TAMURA CORPORATION;NATIONAI INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Higashiwaki, Masataka Tokyo, JP 20 209
Sasaki, Kohei Tokyo, JP 52 293

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