Method and apparatus for forming a straight line projection on a semiconductor substrate
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United States of America Patent
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Jul 19, 2016
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app pub date -
Mar 28, 2012
filing date -
Mar 28, 2011
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Abstract
An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction. The curved mirror and the point source form a system having an axis of revolution wherein the point source is provided on or near said axis of revolution. The axis of revolution substantially coincides with a straight line projection to be generated on a semiconductor substrate. Additionally, the use of such an apparatus for manufacturing a selective emitter grid, or for irradiating a large area semiconductor surface in a scanning movement, is disclosed.
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