Transient voltage suppressor and its manufacturing method
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United States of America Patent
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Jul 12, 2016
Grant Date -
Apr 30, 2015
app pub date -
Oct 1, 2014
filing date -
Oct 31, 2013
priority date (Note) -
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Abstract
A transient voltage suppressor and its manufacturing method are provided, which can easily control voltage withstanding characteristics of a Zener diode by analogizing growth of a buried layer by forming a portion of the buried layer by performing ion implantation on a first epitaxial layer and then forming the other portion of the buried layer while depositing a second epitaxial layer having the same impurity concentration with the first epitaxial layer, and which can improve a current distribution characteristic by forming a doping region in a ring shape to increase a current pass region by increasing a PN junction area of a Zener diode in a small area.
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