Solder balls and semiconductor device employing the same
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United States of America Patent
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Jul 12, 2016
Grant Date -
Dec 31, 2015
app pub date -
Jul 30, 2014
filing date -
Jun 30, 2014
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Abstract
A solder ball and a semiconductor device using the same are provided. In a Sn-based solder ball in which a first plating layer and a second plating layer are sequentially formed on a core ball, the second plating layer includes a Sn—Ag—Cu alloy, and Ag3Sn intermetallic compound (IMC) nanoparticles or Ag—Sn compound nanoparticles exist in the second plating layer. The solder balls have high sphericity and stand-off characteristics and connection reliability so that a semiconductor device having a high degree of integration may be implemented.
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