Phase shift mask, method of forming asymmetric pattern, method of manufacturing diffraction grating, and method of manufacturing semiconductor device
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United States of America Patent
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Jul 12, 2016
Grant Date -
Oct 9, 2014
app pub date -
Sep 13, 2012
filing date -
Oct 7, 2011
priority date (Note) -
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status (Latency Note)
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Abstract
A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer.
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| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jan 12, 2028 |
