Electrochemical liquid-liquid-solid deposition processes for production of group IV semiconductor materials
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United States of America Patent
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Jul 12, 2016
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Jul 10, 2014
app pub date -
Jul 20, 2012
filing date -
Jul 22, 2011
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Abstract
An electrochemical liquid-liquid-solid (LLS) process that produces unlimited amounts of crystalline semiconductor, such as Ge or Si, from aqueous or polar solutions with tunable nanostructured shapes without any physical or chemical templating agent is presented. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid electrode (e.g., Hg pool) or near an electrode comprising metallic nanoparticles (e.g., In nanoparticles) yields a polycrystalline semiconductor material, as deposited. Such a process can be conducted at conditions, in a single step, and under electrochemical control, while affording control over formation of a variety of material morphologies. Materials formed by such processes are also provided.
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