Semiconductor diode assembly
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United States of America Patent
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Jul 5, 2016
Grant Date -
Jul 23, 2015
app pub date -
Mar 30, 2015
filing date -
Dec 13, 2012
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Abstract
TSV devices with p-n junctions that are planar have superior performance in breakdown and current handling. Junction diode assembly formed in enclosed trenches occupies less chip area compared with junction-isolation diode assembly in the known art. Diode assembly fabricated with trenches formed after the junction formation reduces fabrication cost and masking steps increase process flexibility and enable asymmetrical TSV and uni-directional TSV functions.
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