Method for manufacturing semiconductor device
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United States of America Patent
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Jul 5, 2016
Grant Date -
Mar 10, 2016
app pub date -
May 29, 2015
filing date -
Sep 6, 2014
priority date (Note) -
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Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming, on a substrate, a plurality of fins extending along a first direction; forming, on the fins, a dummy gate stack extending along a second direction; forming a gate spacer on opposite sides of the dummy gate stack in the first direction; epitaxially growing raised source/drain regions on the top of the fins on opposite sides of the gate spacer in the first direction; performing lightly-doping ion implantation through the raised source/drain regions with the gate spacer as a mask, to form source/drain extension regions in the fins on opposite sides of the gate spacer in the first direction; removing the dummy gate stack to form a gate trench; and forming a gate stack in the gate trench.
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