Offset-cancelling self-reference STT-MRAM sense amplifier
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United States of America Patent
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Jul 5, 2016
Grant Date -
Oct 15, 2015
app pub date -
Dec 23, 2014
filing date -
Apr 9, 2014
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Abstract
Embodiments are directed to a self-reference STT-MRAM sensing scheme that uses offset-cancellation to reduce the impact of FET mismatch and thereby allow the sensing of lower read voltages. In some embodiments, the sensing scheme includes a differential amplifier having a first input connected to a memory cell. In some embodiments, a second input of the differential amplifier may be connected to ground, a common mode voltage of the system or a mid-level supply voltage. The present disclosure provides flexibility with respect to the voltage level at which the sensing is performed (e.g., ground, Voc, Vmid, etc.). The present disclosure provides further flexibility with respect to the sense voltage polarity.
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