High voltage bootstrap gate driving apparatus
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United States of America Patent
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Jun 28, 2016
Grant Date -
Oct 29, 2015
app pub date -
Jun 3, 2014
filing date -
Apr 29, 2014
priority date (Note) -
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Abstract
A high voltage bootstrap gate driving apparatus is provided. The gate driving apparatus includes a high-end transistor, a low-end transistor, a buffer, a boost capacitor, and a high voltage depletion transistor. The high-end transistor receives a first power voltage. The buffer provides a high-end driving signal to the high-end transistor according to a bias voltage. The boost capacitor is serial coupled between a base voltage and a bias voltage. A first end of the depletion transistor is coupled to a second power voltage, a second end of the depletion transistor is coupled to the bias voltage, and a control end of the depletion transistor receives the reference ground voltage.
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