Magneto-electric voltage controlled spin transistors
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United States of America Patent
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Jun 28, 2016
Grant Date -
Aug 21, 2014
app pub date -
Feb 18, 2014
filing date -
Feb 18, 2013
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Abstract
The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
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