Crystalline multilayer structure and semiconductor device
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United States of America Patent
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Jun 28, 2016
Grant Date -
Nov 12, 2015
app pub date -
Dec 19, 2014
filing date -
May 8, 2014
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Abstract
Provided is a crystalline multilayer structure which has good electrical properties and is useful for semiconductor devices. A crystalline multilayer structure includes a base substrate and a crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween and including a corundum-structured oxide semiconductor as a major component. The oxide semiconductor contains indium and/or gallium as a major component. The crystalline oxide semiconductor thin film contains germanium, silicon, titanium, zirconium, vanadium, or niobium.
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