Silicon substrates with doped surface contacts formed from doped silicon based inks and corresponding processes

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United States of America Patent

PATENT NO 9378957
APP PUB NO 20140162445A1
SERIAL NO

14180600

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Abstract

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The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.

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Patent Owner(s)

Patent OwnerAddress
NANOGRAM CORPORATIONMILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiruvolu, Shivkumar San Jose, US 56 1135
Liu, Guojun Suzhou, CN 44 695
Srinivasan, Uma Mountain View, US 51 782

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