Method for semiconductor process corner sweep simulation based on value selection function
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United States of America Patent
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Jun 28, 2016
Grant Date -
Jun 16, 2016
app pub date -
Dec 11, 2014
filing date -
Dec 11, 2014
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Abstract
The present invention relates to a field of semiconductor design technologies. The present invention implements a sweep simulation method in which process corners are continuously swept in a simulation job, and a process corner a field is used as an independent variable, so that a simulation program outputs a waveform chart using the parameter values of the device model under various process corner conditions or performance response values of a testbench circuit under various process corner conditions as dependent variables. Thereby, parameter deviations of the device model and performance deviations of the testbench circuit under various process corner conditions are presented in a same coordinate system, and visual technical references are provided for a designer, and process deviations are properly taken into account in a circuit design, and possible fatal defects of the circuit design caused by a process deviation impact are avoided, and a processing procedure of the simulation program is greatly simplified, and efficiency of research and development of the designer is improved.
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