Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen
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United States of America Patent
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Jun 28, 2016
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Mar 28, 2013
app pub date -
Nov 16, 2012
filing date -
Mar 14, 2005
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Abstract
A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.
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