Method for fabricating semiconductor device
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United States of America Patent
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Jun 21, 2016
Grant Date -
May 28, 2015
app pub date -
Feb 20, 2014
filing date -
Nov 28, 2013
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Abstract
A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.
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