Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet
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United States of America Patent
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Jun 21, 2016
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Jul 15, 2011
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Jul 15, 2010
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Abstract
The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
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