Apparatuses and methods utilizing etch stop layers
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United States of America Patent
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Jun 21, 2016
Grant Date -
Sep 24, 2015
app pub date -
Mar 20, 2014
filing date -
Mar 20, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
Provided herein is an apparatus, including a substrate; an etch stop layer overlying the substrate, wherein the etch stop layer is substantially resistant to etching conditions; and a patterned layer overlying the etch stop layer, wherein the patterned layer is substantially labile to the etching conditions, and wherein the patterned layer comprises a number of features including substantially consistent feature profiles among regions of high feature density and regions of low feature density.
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International Classification(s)
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- B29C:SHAPING OR JOINING OF PLASTICS; SHAPING OF SUBSTAN....
- B29D:PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FRO....
- G11B:INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BET....
- B29K:INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, ....
- G03F:PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNE....
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