Semiconductor laser mounting for improved frequency stability
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United States of America Patent
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Jun 14, 2016
Grant Date -
Sep 20, 2012
app pub date -
Aug 17, 2011
filing date -
Feb 14, 2011
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Abstract
A first contact surface of a semiconductor laser chip can be formed to a target surface roughness selected to have a maximum peak to valley height that is substantially smaller than a barrier layer thickness of a metallic barrier layer to be applied to the first contact surface. A metallic barrier layer having the barrier layer thickness can be applied to the first contact surface, and the semiconductor laser chip can be soldered to a carrier mounting along the first contact surface using a solder composition by heating the soldering composition to less than a threshold temperature at which dissolution of the metallic barrier layer into the soldering composition occurs. Related systems, methods, articles of manufacture, and the like are also described.
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