Gallium nitride power semiconductor device having a vertical structure
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United States of America Patent
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Jun 14, 2016
Grant Date -
Jan 15, 2015
app pub date -
Jul 9, 2013
filing date -
Jul 9, 2013
priority date (Note) -
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Abstract
A semiconductor device includes a substrate having first and second sides and a first active layer disposed over the first side of the substrate. A second active layer is disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. At least one trench extends through the first and second active layers and the two-dimensional electron gas layer and into the substrate. A conductive material lines the trench. A first electrode is disposed on the second active layer and a second electrode is disposed on the second side of the substrate.
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