Read-only memory and its manufacturing method
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United States of America Patent
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Jun 14, 2016
Grant Date -
Jun 5, 2014
app pub date -
Aug 2, 2012
filing date -
Sep 28, 2011
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Abstract
A read-only memory includes a plurality of storage units arranged in an array. The read-only memory includes two kinds of storage units with different structures, the two kinds of storage units with different structures are a first MOS transistor and a second MOS transistor. A source and a drain of the first MOS transistor have the same type, a source and a drain of the second MOS transistor have inverse type. These two kinds of MOS transistors can be used to store binary 0 and 1 respectively. In the manufacturing method of the read-only memory, the same type of drain and source can be manufactured simultaneously, no extra mask plate is needed, so the extra mask plate of a conventional read-only memory can be saved.
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