Magnetic resistance structure, method of manufacturing the magnetic resistance structure, and electronic device including the magnetic resistance structure

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United States of America Patent

PATENT NO 9368177
APP PUB NO 20150131371A1
SERIAL NO

14282470

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Abstract

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Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jang, Sung-kyu Suwon-si, KR 16 93
Jeon, Insu Incheon, KR 21 43
Jung, Seong-jun Suwon-si, KR 2 12
Kim, Min-woo Suwon-si, KR 72 540
Lee, Sung-joo Suwon-si, KR 11 233
Song, Young-jae Suwon-si, KR 5 190
Suh, Hwansoo Gunpo-si, KR 9 35
Wang, Min Suwon-si, KR 957 5670
Wu, Qinke Suwon-si, KR 3 12

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