Columnar crystal containing light emitting element and method of manufacturing the same
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United States of America Patent
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Jun 7, 2016
Grant Date -
Oct 25, 2007
app pub date -
Aug 30, 2005
filing date -
Aug 31, 2004
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Abstract
A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.
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