Semiconductor devices with enhanced electromigration performance
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United States of America Patent
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Jun 7, 2016
Grant Date -
Feb 5, 2015
app pub date -
Oct 16, 2014
filing date -
Nov 12, 2012
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Abstract
Semiconductor devices with enhanced electromigration performance and methods of manufacture are disclosed. The method includes forming at least one metal line in electrical contact with a device. The method further includes forming at least one staple structure in electrical contact with the at least one metal line. The at least one staple structure is formed such that electrical current passing through the at least one metal line also passes through the at least staple structure to reduce electromigration issues.
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