Memory device with background built-in self-repair using background built-in self-testing
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United States of America Patent
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Jun 7, 2016
Grant Date -
Oct 23, 2014
app pub date -
Jun 30, 2014
filing date -
Jan 1, 2012
priority date (Note) -
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Abstract
A memory device with a background built-in self-repair module (BBISRM) includes a main memory, an arbiter, and a redundant memory to repair a target memory under test (TMUT). The memory device also includes a background built-in self-test module (BBISTM) to identify portions of memory needing background built-in self-repair (BBISR). The BBISRM or the BBISTM can operate simultaneously while the memory device is operational for performing external accesses during field operation. The BBISR can detect and correct a single data bit error in the data stored in the TMUT. The arbiter configured to receive a read or write access memory request including a memory address, to determine if the memory address of the read or write access memory request matches the memory address mapped to the selected portion of the redundant memory, and to read or write data from the selected portion of the redundant memory, respectively.
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