Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
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United States of America Patent
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Jun 7, 2016
Grant Date -
Nov 14, 2013
app pub date -
Feb 28, 2013
filing date -
Feb 29, 2012
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Abstract
A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
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