Semiconductor DBR laser
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United States of America Patent
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May 31, 2016
Grant Date -
Oct 8, 2015
app pub date -
Nov 1, 2013
filing date -
Nov 1, 2012
priority date (Note) -
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Abstract
A semiconductor distributed Bragg reflector laser configured for single longitudinal mode operation, having an optical waveguide comprising an optical gain section, a first reflector being a first distributed Bragg reflector (DBR) section comprising a grating configured to produce a reflection spectrum having one or more first reflective peaks, and a second reflector, wherein the first DBR section is configured to compensate for thermal chirp that is induced inhomogeneously along the length of the DBR section, in use.
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