Magnetic tunneling junction devices, memories, memory systems, and electronic devices
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United States of America Patent
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May 31, 2016
Grant Date -
Jun 4, 2015
app pub date -
Feb 10, 2015
filing date -
Aug 10, 2011
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Abstract
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
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