Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
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United States of America Patent
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May 31, 2016
Grant Date -
Mar 31, 2016
app pub date -
Mar 26, 2015
filing date -
Sep 30, 2014
priority date (Note) -
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Abstract
Provided is a configuration capable of suppressing a variation in characteristics of transistor. The configuration includes: a process chamber; a gas supply unit configured to supply a hard mask forming gas into the process chamber; a substrate support table configured to support a substrate Wn of an nth lot having a film to be etched formed thereon; a heater embedded in the substrate support table; and a controller configured to control a temperature distribution of the heater based on an etching information of a substrate Wm of an mth lot processed prior to the nth lot.
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