EUV mask and method for forming the same
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United States of America Patent
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May 31, 2016
Grant Date -
Jul 24, 2014
app pub date -
Apr 4, 2014
filing date -
Dec 16, 2011
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Abstract
An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.
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