Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrate
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United States of America Patent
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May 31, 2016
Grant Date -
Jun 6, 2013
app pub date -
Nov 30, 2012
filing date -
Dec 2, 2011
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Abstract
A rotational misalignment between semiconductor wafers constituting a bonded wafer is calculated. A light source is arranged at a position which is on a front side of an opening of a notch and which is separated from an outer edge portion of a bonded wafer by a predetermined interval, and outputs light to irradiate the outer edge portion of the bonded wafer including the notch. A camera receives and photoelectrically converts reflected light that is specularly-reflected by the outer edge portion of the bonded wafer including the notch among the light outputted by the light source in order to output a brightness distribution of the reflected light as an image. A computer analyzes positions of notches from the image outputted by the camera to obtain a notch position misalignment, and further calculates a rotational misalignment between semiconductor wafers using a center position misalignment between the semiconductor wafers.
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