-based single crystal substrate

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United States of America Patent

PATENT NO 9349915
APP PUB NO 20150249185A1
SERIAL NO

14633106

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Abstract

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A β-Ga2O3-based single crystal substrate includes a β-Ga2O3-based single crystal. The β-Ga2O3-based single crystal includes a full width at half maximum of an x-ray rocking curve of less than 75 seconds.

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Patent Owner(s)

Patent OwnerAddress
TAMURA CORPORATION1-19-43 HIGASHI-OIZUMI NERIMA-KU TOKYO 1788511

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koshi, Kimiyoshi Tokyo, JP 13 22
Takizawa, Masaru Tokyo, JP 12 103
Wakimoto, Daiki Tokyo, JP 8 17
Watanabe, Makoto Tokyo, JP 386 3408
Watanabe, Shinya Tokyo, JP 282 1738
Yamaoka, Yu Tokyo, JP 7 13

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