Method of depositing a ruthenium metal thin film or ruthenium oxide thin film

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United States of America Patent

PATENT NO 9347133
APP PUB NO 20150050431A1
SERIAL NO

14351930

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Abstract

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A method of depositing a ruthenium metal thin film or ruthenium oxide thin film comprising a ruthenium compound used for depositing metallic Ru or RuO2 thin film on a substrate via atomic layer deposition, and the ruthenium compound represented by Chemical Formula 1, wherein L is a ligand selected from the group consisting of 1-ethyl-1,4-cyclohexadiene, 1,3-butadiene, and isoprene.

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Patent Owner(s)

Patent OwnerAddress
HANSOL CHEMICAL CO LTD7~8F 513 TEHERAN-RO GANGNAM-GU SEOUL 06169 06169

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jin, Whee Won Seoul, KR 1 2
Kim, Jun Young Jeonju, KR 164 489
Lee, Kwang deok Jeollabuk-do, KR 1 2
Park, Jung Woo Seoul, KR 85 668

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