Method for fabricating a light emitting diode (LED) die having protective substrate
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United States of America Patent
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May 17, 2016
Grant Date -
Jun 5, 2014
app pub date -
Feb 7, 2014
filing date -
Jan 3, 2011
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Abstract
A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.
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