Direct formation of graphene on semiconductor substrates
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United States of America Patent
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May 17, 2016
Issued Date -
N/A
app pub date -
Oct 8, 2014
filing date -
Oct 19, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and depositing a metal film on the carbon layer. A thermal cycle degrades the carbon-containing layer, which forms graphene directly upon the semiconductor substrate upon cooling. In some embodiments, the carbon source is a carbon-containing gas, and the thermal cycle causes diffusion of carbon atoms into the metal film, which, upon cooling, segregate and precipitate into a layer of graphene directly on the semiconductor substrate.
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International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 4 Citation Count
- H01L Class
- 13.47 % this patent is cited more than
- 9 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 17, 2027 |
