Method to delineate crystal related defects
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United States of America Patent
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May 17, 2016
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app pub date -
Oct 4, 2011
filing date -
Oct 14, 2011
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Abstract
This invention generally relates to a process for detecting grown-in-defects in a semiconductor silicon substrate. The process includes contacting a surface of the semiconductor silicon substrate with a gaseous acid in a reducing atmosphere at a temperature and duration sufficient to grow grown-in -defects disposed in the semiconductor silicon substrate to a size capable of being detected by an optical detection device.
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