Method and apparatus for plasma dicing a semi-conductor wafer
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United States of America Patent
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May 17, 2016
Grant Date -
Dec 26, 2013
app pub date -
Aug 29, 2013
filing date -
Mar 14, 2011
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Abstract
The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.
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