Resistance change nonvolatile storage device and method of controlling the same
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United States of America Patent
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May 17, 2016
Grant Date -
Aug 13, 2015
app pub date -
Aug 9, 2013
filing date -
Sep 18, 2012
priority date (Note) -
Withdrawn
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Abstract
To improve a reading speed and a writing speed while preventing occurrence of disturbance in a resistance storage element, specifically, a nonvolatile storage device that has a memory having at least one nonvolatile resistance storage element and a control unit configured to write a high resistance state or a low resistance state to the resistance storage element, wherein the control unit applies a bias to the resistance storage element in a verification operation carried out after writing the high resistance state, or applies a bias to the resistance storage element in a verification operation carried out after writing the low resistance state, these biases being in directions opposite to each other.
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