Method and system for forming a pattern on a reticle using charged particle beam lithography

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United States of America Patent

PATENT NO 9341936
SERIAL NO

14177688

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Abstract

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A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. A similar method and a similar system for forming a pattern on a reticle are also disclosed.

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Patent Owner(s)

Patent OwnerAddress
D2S INC4040 MOORPARK AVE SUITE 250 SAN JOSE CA 95117

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujimura, Akira Saratoga, US 225 2554

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