Epitaxial wafer and method of producing same
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United States of America Patent
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May 17, 2016
Grant Date -
Mar 6, 2008
app pub date -
Sep 5, 2007
filing date -
Sep 6, 2006
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Abstract
A method of producing an epitaxial wafer, comprising: performing epitaxial growth of silicon on a main surface of a wafer made of a silicon single crystal; performing surface flattening pretreatment of a main surface of the wafer using a treatment liquid of a predetermined composition at a temperature of 100° C. or less, thereby forming an oxide film of a predetermined thickness while removing particles adhered on the main surface of the wafer; and performing a surface polishing step where the main surface of the wafer is mirror polished.
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